Final Year Project: Growth and characterization of gallium nitride (GaN) based heterostructures
• Growth, investigations/experiments and discussions pertaining to the growth of GaN-based heterostructures for the selective area growth of QCD-based heterostructures and regrowth of Si-doped GaN on Si and SiC to achieve lowest contact resistances • Design and modification of masks using Clewin software to meet specifications of stakeholders for QCD growth • Analysis of growth using equipment such as optical and atomic force microscopy, Nanocalc film thickness measurement, Hall equipment and High-Resolution X-Ray Diffraction while data is presented in a systematic and concise manner using tools such as OriginPro and AMASS • Assisted in the planning of DOE, technical writing for proposal and publications, daily checklists and routines and maintained ISO specifications in the laboratory • Adhoc tasks such as additional literature review on emerging technologies and administrative work